About: P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor N0 into ZnO what was proven by Second Ion Mass Spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omega cm, a Hall mobility of 22 cm(2)V(-1) s(-1) and the carrier concentration of 3.6 x 10(14) cm(-3) were yielded at 75%N-2. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25% N-2 and of (100) plane for higher N2 concentrations. The average grain size was from 7 to 42 nm for all Ar/N-2 ratios. ZnO:N films exhibit relatively high microstrains (10 x 10(-3)). Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N2 gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor N0 into ZnO what was proven by Second Ion Mass Spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omega cm, a Hall mobility of 22 cm(2)V(-1) s(-1) and the carrier concentration of 3.6 x 10(14) cm(-3) were yielded at 75%N-2. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25% N-2 and of (100) plane for higher N2 concentrations. The average grain size was from 7 to 42 nm for all Ar/N-2 ratios. ZnO:N films exhibit relatively high microstrains (10 x 10(-3)). (en)
Title	P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen (en)
skos:prefLabel	P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen P-Type conduction in Sputtered ZnO Thin films Doped by Nitrogen (en)
skos:notation	RIV/49777513:23640/06:00503262!RIV11-MSM-23640___
http://linked.open...avai/riv/aktivita	N
http://linked.open...avai/riv/aktivity	N
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Šutta, Pavol
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	496016
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/06:00503262
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Electrical properties; p-type; doping; ZnO (en)
http://linked.open.../riv/klicoveSlovo	p-type Electrical properties doping ZnO
http://linked.open...ontrolniKodProRIV	[FD38C6FE464E]
http://linked.open...v/mistoKonaniAkce	Belgrade
http://linked.open...i/riv/mistoVydani	Belgrade
http://linked.open...i/riv/nazevZdroje	Proceedings of 25th International Conference on Microelectronics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...UplatneniVysledku	2006
http://linked.open...iv/tvurceVysledku	Novotný, I. Šutta, Pavol Shtereva, Krasimira Kováč, J. Tvarožek, V. Vincze, A.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open...ain/vavai/riv/wos	000238839700068
http://linked.open.../riv/zahajeniAkce	2006-05-14 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Serbia and Montenegro IEEE Section - ED/SSc Chapter
https://schema.org/isbn	1-4244-0117-8
http://localhost/t...ganizacniJednotka	23640

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