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  • ZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummar polycrystalline structure with preffered orientation in <002> direction, resitstivity ~ 1 &#937;cm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au and ZnO were formed by use of RF sputtering.
  • ZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummar polycrystalline structure with preffered orientation in <002> direction, resitstivity ~ 1 &#937;cm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au and ZnO were formed by use of RF sputtering. (en)
  • ZnO byl nedávno ohodnocen jako významný materiál pro nanotechnologie. Naprašované tenké vrstvy ZnO mají sloupcovitou polykrystalickou strukturu s přednostní orientací ve směru <002>, rezistivitu ~ 1 &#937;cm a optickou šířku zakázaného pásma Eg = 3,33 eV. Nanoklastry Au a ZnO byly vytvořeny vysokofrekvenčním naprašováním. (cs)
Title
  • ZnO nanostructures prepareted by RF sputtering
  • ZnO nanostructures prepareted by RF sputtering (en)
  • Nanostruktura ZnO připravená vysokofrekvenčním naprašováním (cs)
skos:prefLabel
  • ZnO nanostructures prepareted by RF sputtering
  • ZnO nanostructures prepareted by RF sputtering (en)
  • Nanostruktura ZnO připravená vysokofrekvenčním naprašováním (cs)
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  • RIV/49777513:23640/06:00000039!RIV08-MSM-23640___
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  • Šutta, Pavol
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  • RIV/49777513:23640/06:00000039
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  • thin films; RF sputtering; nanotechnology (en)
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  • Advances in Electrical and Electronic Engineering
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  • Novotný, Ivan
  • Šutta, Pavol
  • Flickyngerová, Soňa
  • Tvarožek, Vladimír
  • Šatka, P.
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  • 1336-1376
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