About: Pathway for a low-temperature deposition of alpha-Al2O3: A molecular-dynamics study     Goto   Sponge   NotDistinct   Permalink

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Description
  • Thin films of alpha-Al2O3 are of high interest because of their mechanical properties. Previously, the preparation of Al2O3 has been described in terms of extrinsic process parameters, such as total pressure, oxygen partial pressure or substrate bias potential. In this paper the growth of Al2O3 is studied by atom-by-atom molecular dynamics simulations, focused on intrinsic process parameters such as ion energy, ion fraction in the particle flux, growth temperature and growth template. While the preparation of alpha-Al2O3 by currently available techniques requires temperatures of around 1000 °C (well above the typical softening temperature of tool steel substrates), the paper presents a narrow window of intrinsic process parameters which leads to an uninterrupted epitaxial growth or growth of previously nucleated alpha-Al2O3 at low temperatures.
  • Thin films of alpha-Al2O3 are of high interest because of their mechanical properties. Previously, the preparation of Al2O3 has been described in terms of extrinsic process parameters, such as total pressure, oxygen partial pressure or substrate bias potential. In this paper the growth of Al2O3 is studied by atom-by-atom molecular dynamics simulations, focused on intrinsic process parameters such as ion energy, ion fraction in the particle flux, growth temperature and growth template. While the preparation of alpha-Al2O3 by currently available techniques requires temperatures of around 1000 °C (well above the typical softening temperature of tool steel substrates), the paper presents a narrow window of intrinsic process parameters which leads to an uninterrupted epitaxial growth or growth of previously nucleated alpha-Al2O3 at low temperatures. (en)
Title
  • Pathway for a low-temperature deposition of alpha-Al2O3: A molecular-dynamics study
  • Pathway for a low-temperature deposition of alpha-Al2O3: A molecular-dynamics study (en)
skos:prefLabel
  • Pathway for a low-temperature deposition of alpha-Al2O3: A molecular-dynamics study
  • Pathway for a low-temperature deposition of alpha-Al2O3: A molecular-dynamics study (en)
skos:notation
  • RIV/49777513:23520/13:43919458!RIV14-MSM-23520___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I
http://linked.open...iv/cisloPeriodika
  • 235
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 95513
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/13:43919458
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • molecular dynamics; ion-assisted deposition; crystal growth; Al2O3 (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [312EB08BF9EF]
http://linked.open...i/riv/nazevZdroje
  • Surface & Coatings Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 2013
http://linked.open...iv/tvurceVysledku
  • Houška, Jiří
http://linked.open...ain/vavai/riv/wos
  • 000329596100043
issn
  • 0257-8972
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.surfcoat.2013.07.062
http://localhost/t...ganizacniJednotka
  • 23520
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