About: Effect of nitrogen content on electronic structure and properties of SiBCN materials

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on the effect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain the effect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity. Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on the effect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain the effect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity. (en)
Title	Effect of nitrogen content on electronic structure and properties of SiBCN materials Effect of nitrogen content on electronic structure and properties of SiBCN materials (en)
skos:prefLabel	Effect of nitrogen content on electronic structure and properties of SiBCN materials Effect of nitrogen content on electronic structure and properties of SiBCN materials (en)
skos:notation	RIV/49777513:23520/11:43898420!RIV12-MSM-23520___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika	6
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Calta, Pavel Petrman, Vít Houška, Jiří Kos, Šimon Vlček, Jaroslav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Fakulta aplikovaných věd
http://linked.open...dnocenehoVysledku	196378
http://linked.open...ai/riv/idVysledku	RIV/49777513:23520/11:43898420
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	bonding structure; optical transmission; electronic band structure; ab initio calculations; SiBCN materials (en)
http://linked.open.../riv/klicoveSlovo	ab initio calculations SiBCN materials bonding structure electronic band structure optical transmission
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[619FA0FCE29E]
http://linked.open...i/riv/nazevZdroje	Acta Materialia
http://linked.open...in/vavai/riv/obor	BL
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	59
http://linked.open...iv/tvurceVysledku	Houška, Jiří Kos, Šimon Vlček, Jaroslav Calta, Pavel Petrman, Vít
http://linked.open...n/vavai/riv/zamer	Procesy ve výbojovém plazmatu a nové tenkovrstvé materiály s unikátními vlastnostmi
issn	1359-6454
number of pages	9 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.actamat.2010.12.030
http://localhost/t...ganizacniJednotka	23520

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