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  • The paper contains a detailed discussion of the electronic structure of the novel hard and thermally stable amorphous SiBCN materials. We focus on the weight of individual electronic states on different elements, bond types, bonds of different lengths, and the number of atoms and clusters of atoms the states are localized on. A special attention is paid to the states around the Fermi level. We show in detail the effect of individual elements and bond types on the (non)conductivity of the materials. The results provide a detailed insight into the complex relationships between the material composition and the electronic properties, and allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability with electrical conductivity.
  • The paper contains a detailed discussion of the electronic structure of the novel hard and thermally stable amorphous SiBCN materials. We focus on the weight of individual electronic states on different elements, bond types, bonds of different lengths, and the number of atoms and clusters of atoms the states are localized on. A special attention is paid to the states around the Fermi level. We show in detail the effect of individual elements and bond types on the (non)conductivity of the materials. The results provide a detailed insight into the complex relationships between the material composition and the electronic properties, and allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability with electrical conductivity. (en)
Title
  • SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity
  • SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity (en)
skos:prefLabel
  • SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity
  • SiBCN materials for high-temperature applications: Atomistic origin of electrical conductivity (en)
skos:notation
  • RIV/49777513:23520/10:00503579!RIV11-MSM-23520___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika
  • 8
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 287228
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/10:00503579
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • SiBCN materials; ab initio calculations; electronic band structure; electrical conductivity; bonding structure (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [81AB87D425A5]
http://linked.open...i/riv/nazevZdroje
  • Journal of Applied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 108
http://linked.open...iv/tvurceVysledku
  • Houška, Jiří
  • Kos, Šimon
http://linked.open...ain/vavai/riv/wos
  • 000283745100069
http://linked.open...n/vavai/riv/zamer
issn
  • 0021-8979
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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