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Description
| - The paper reports molecular-dynamics simulations of particle-by-particle deposition process amorphous SiNH films prepared by plasma-enhanced chemical vapor deposition from SiHx and N radicals. We observe formation of a mixed zone (damaged layer) in the initial stages of film growth, and formation of nanopores in the film bulk. We investigate the effect of various process parameters on both (1) deposition characteristics, such as sticking coefficients, and (2) material characteristics, such as dimension of the nanopores formed. The results provide detailed insight into the complex relationships between the process parameters and the characteristics of the deposited SiNH materials and exhibit an excellent agreement with the experimentally observed results.
- The paper reports molecular-dynamics simulations of particle-by-particle deposition process amorphous SiNH films prepared by plasma-enhanced chemical vapor deposition from SiHx and N radicals. We observe formation of a mixed zone (damaged layer) in the initial stages of film growth, and formation of nanopores in the film bulk. We investigate the effect of various process parameters on both (1) deposition characteristics, such as sticking coefficients, and (2) material characteristics, such as dimension of the nanopores formed. The results provide detailed insight into the complex relationships between the process parameters and the characteristics of the deposited SiNH materials and exhibit an excellent agreement with the experimentally observed results. (en)
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Title
| - Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride
- Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride (en)
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skos:prefLabel
| - Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride
- Atom-by-atom simulations of chemical vapor deposition of nanoporous hydrogenated silicon nitride (en)
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skos:notation
| - RIV/49777513:23520/10:00503473!RIV11-MSM-23520___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23520/10:00503473
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - SiNH; molecular dynamics; PECVD; sticking coefficient; porosity (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Applied Physics
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Houška, Jiří
- Martinů, Ludvík
- Klemberg-Sapieha, Jolanta Eva
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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