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Description
  • Článek se zabývá novým fyzikálním fenoménem spojeným s prudkou změnou povrchové teploty Tsurf během růstu vrstev připravených magnetronovým naprašováním a jejím sledováním pomocí IR spektroskopie a nové kalorimetrické metody. Povrchová teplota Tsurf na začátku depozice odpovídá teplotě substrátu Ts a během depozice výrazně roste a na konci procesu několikanásobně tuto teplotu přesahuje Tsurf >> Ts. Tento fenomén je spojen s vytvořením tenké, kapalině podobné, vrstvy na povrchu rostoucí vrstvy s extrémně nízkou tepelnou vodivostí (až 109krát nižší pro kovy). S tímto fenoménem jsou spojeny změny struktury a vlastností vrstev ve směru jejich růstu, které korelují s velikostí povrchov (cs)
  • New physical phenomenon consisting in development of the surface temperature Tsurf, which being equal to the substrate temperature Ts at the beginning of deposition, steeply increases and becomes several times higher than Ts at the end of the process, is revealed by means of IR-camera and new calorimetric method during sputter deposition of metal films. The reason for the phenomenon is the formation of a liquid-like layer on the growth surface with extremely low thermal conductivity. Variation in the film structure along thickness correlates with the variation in Tsurf. To explain these effects we developed a model according to which film grows by gas-liquid-solid rather than gas-solid mechanism which is realized provided that the film grows from energetic atoms.
  • New physical phenomenon consisting in development of the surface temperature Tsurf, which being equal to the substrate temperature Ts at the beginning of deposition, steeply increases and becomes several times higher than Ts at the end of the process, is revealed by means of IR-camera and new calorimetric method during sputter deposition of metal films. The reason for the phenomenon is the formation of a liquid-like layer on the growth surface with extremely low thermal conductivity. Variation in the film structure along thickness correlates with the variation in Tsurf. To explain these effects we developed a model according to which film grows by gas-liquid-solid rather than gas-solid mechanism which is realized provided that the film grows from energetic atoms. (en)
Title
  • Novel model for film growth based on surface temperature developing during magnetron sputtering
  • Nový model růstu vrstev založený na průběhu jejich povrchové teploty během procesů magnetronového naprašování (cs)
  • Novel model for film growth based on surface temperature developing during magnetron sputtering (en)
skos:prefLabel
  • Novel model for film growth based on surface temperature developing during magnetron sputtering
  • Nový model růstu vrstev založený na průběhu jejich povrchové teploty během procesů magnetronového naprašování (cs)
  • Novel model for film growth based on surface temperature developing during magnetron sputtering (en)
skos:notation
  • RIV/49777513:23520/07:00000428!RIV08-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 486
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • S
http://linked.open...iv/cisloPeriodika
  • 0
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 437915
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/07:00000428
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • sputter deposition; electron microscopy; surface temperature (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [4327345ED853]
http://linked.open...i/riv/nazevZdroje
  • Surface and Coatings Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Musil, Jindřich
  • Shaginyan, L. R.
  • Han, J. G.
  • Belousov, I. V.
  • Britun, N. V.
  • Kim, Youn J.
issn
  • 0257-8972
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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