About: Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification     Goto   Sponge   NotDistinct   Permalink

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  • Amorphous silicon-boron-carbon-nitrogen alloys were deposited by reactive magnetron sputtering, and their bonding statistics and electronic structure were investigated using a combined approach of experiment and molecular dynamics simulations. The authors show a difference between Si-based and C-based Si_B-C-N networks, and investigate coordination numbers and behavior of individual atom types. Furthermore, the authors calculate electronic structure and photoconductivity of the materials. The authors find that both a higher Si/C ratio and an addition of hydrogen increase a band gap of the materials.
  • Amorphous silicon-boron-carbon-nitrogen alloys were deposited by reactive magnetron sputtering, and their bonding statistics and electronic structure were investigated using a combined approach of experiment and molecular dynamics simulations. The authors show a difference between Si-based and C-based Si_B-C-N networks, and investigate coordination numbers and behavior of individual atom types. Furthermore, the authors calculate electronic structure and photoconductivity of the materials. The authors find that both a higher Si/C ratio and an addition of hydrogen increase a band gap of the materials. (en)
  • Amorfní materiály Si-B-C-N byly připraveny metodou reaktivního magnetronového naprašování. Ke zkoumání vazebných statistik a elektronové struktury těchto materiálů byl použit kombinovaný přístup experimentu a molekulární dynamické simulace. Autoři ukazují rozdíly mezi Si-B-C-N systémy s vysokým obsahem křemíku a uhlíku a zároveň zkoumají koordinační čísla a chování jednotlivých atomových typů, dále pak počítají elektronovou strukturu a fotovodivost těchto materiálů. Autoři zjistili, že vyšší poměr Si/C i přidání vodíku do materiálu zvyšuje zakázaný pás. (cs)
Title
  • Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification
  • Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification (en)
  • Statistiky vazeb a elektronová struktura nových materiálů Si-B-C-N: Ab inito výpočty a jejich experimentální ověření (cs)
skos:prefLabel
  • Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification
  • Bonding statistics and electronic structure of novel Si-B-C-N materials: Ab initio calculations and experimental verification (en)
  • Statistiky vazeb a elektronová struktura nových materiálů Si-B-C-N: Ab inito výpočty a jejich experimentální ověření (cs)
skos:notation
  • RIV/49777513:23520/07:00000291!RIV08-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 1411
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  • Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika
  • 0
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 412127
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/07:00000291
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • amorphous Si-B-C-N material; reactive magnetron sputtering; bonding statistics; electronic structure; molecular dynamics simulation (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [612CF7FC4D44]
http://linked.open...i/riv/nazevZdroje
  • Journal of Vacuum Science and Technology A
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Houška, Jiří
  • Vlček, Jaroslav
  • Čapek, Jiří
  • Bilek, Marcela
  • McKenzie, David
http://linked.open...n/vavai/riv/zamer
issn
  • 0734-2101
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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