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| rdf:type
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| Description
| - Energy-resolved mass spectroscopy was used to investigate differences in ion-bombardment characteristics during conventional reactive magnetron sputtering if TiN films and their deposition using a grid-assisted magnetron system with anode at a high potential (up to 350V relative to grounded chamber walls). Narrow ion energy distributions with a maximum corresponding to the ion energy close to 100eV were obtained for the conventional magnetron deposition on a biased substrate (Vb=-100V) in an 80%Ar+20%N2 gas mixture at a pressure of 0.5Pa. On the contrary, the energy distributions of ions bombarding a grounded substrate in the grid-assisted modified magnetron system with the grid potential Vg=+100V were broadened and extended to higher energies (up to 300eV) under the same conditions. the change in the ion energy distributions is caused by increase in the plasma potential due to the high anode potential.
- Energy-resolved mass spectroscopy was used to investigate differences in ion-bombardment characteristics during conventional reactive magnetron sputtering if TiN films and their deposition using a grid-assisted magnetron system with anode at a high potential (up to 350V relative to grounded chamber walls). Narrow ion energy distributions with a maximum corresponding to the ion energy close to 100eV were obtained for the conventional magnetron deposition on a biased substrate (Vb=-100V) in an 80%Ar+20%N2 gas mixture at a pressure of 0.5Pa. On the contrary, the energy distributions of ions bombarding a grounded substrate in the grid-assisted modified magnetron system with the grid potential Vg=+100V were broadened and extended to higher energies (up to 300eV) under the same conditions. the change in the ion energy distributions is caused by increase in the plasma potential due to the high anode potential. (en)
- Hmotnostní spektroskopie s energiovým rozlišením byla použita pro nalezení rozdílů v bombardovacích charakteristikách iontů během konvenční magnetronové depozice filmů z TiN a depozice za použití magnetronového systému s mřížkami s anodou na vysokém kladném potenciálu (až 350V vzhledem k uzemněným stěnám depoziční komory). Úzké rozdělovací funkce energií iontů s maximem odpovídajícím energii iontů 100eV, byly naměřeny v konvenčním magnetronovém systému se substrátem na předpětí Vb=-100V, v plynné směsi 80%Ar+20%N2 a při celkovém tlaku 0.5Pa. Naopak energiové rozdělovací funkce iontů bombardující uzemněný substrát v magnetronovém systému s mřížkami, p (cs)
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| Title
| - Ion-bombardment characteristics during deposition of TiN films using a grid-assisted magnetron system with enhanced plasma potential
- Ion-bombardment characteristics during deposition of TiN films using a grid-assisted magnetron system with enhanced plasma potential (en)
- Charakteristika iontového bombardu během depozice tenkých vrstev TiN v modifikovaném magnetronovém naprašovacím systému s mřížkami (cs)
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| skos:prefLabel
| - Ion-bombardment characteristics during deposition of TiN films using a grid-assisted magnetron system with enhanced plasma potential
- Ion-bombardment characteristics during deposition of TiN films using a grid-assisted magnetron system with enhanced plasma potential (en)
- Charakteristika iontového bombardu během depozice tenkých vrstev TiN v modifikovaném magnetronovém naprašovacím systému s mřížkami (cs)
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| skos:notation
| - RIV/49777513:23520/07:00000206!RIV08-MSM-23520___
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| http://linked.open.../vavai/riv/strany
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - P(ME 673), Z(MSM4977751302)
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23520/07:00000206
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| http://linked.open...riv/jazykVysledku
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| http://linked.open.../riv/klicovaSlova
| - magnetron sputtering; modified sputter source; mass spectroscopy; ion bomberdmenteffects; TiN films (en)
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| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| |
| http://linked.open...in/vavai/riv/obor
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| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
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| http://linked.open...vavai/riv/projekt
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| http://linked.open...UplatneniVysledku
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| http://linked.open...iv/tvurceVysledku
| - Houška, Jiří
- Vlček, Jaroslav
- Kudláček, Pavel
- Han, J. G.
- Jung, Min J.
- Kim, Yong M.
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| http://linked.open...n/vavai/riv/zamer
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| issn
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| number of pages
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| http://localhost/t...ganizacniJednotka
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