About: Magnetron deposited TiO2 thin films crystallization and temperature dependence of microstructure and phase composition     Goto   Sponge   NotDistinct   Permalink

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  • Several sets of nanocrystalline and amorphous TiO2 thin films magnetron deposited on glass and Si substrates have been studied. Phase analysis and X-ray line broadening were studied by X-ray powder diffraction in parallel beam optics; the residual stresses were measured with the aid of the Eulerian cradle and surface roughness determined by X-ray reflectivity measurement. A set of amorphous films with different thickness was studied after annealing and also by in-situ measurements during the heating. It was found that the crystallization temperature started at about 250 °C for thicker films but it was higher for thinner films (< 200 nm) and reached about 350 °C. Thinner films were single phase (anatase) while thicker films above 1200 nm contained also a small amount of nanocrystalline rutile. The crystallite size of these samples immediately after crystallization was larger than 100 nm.
  • Several sets of nanocrystalline and amorphous TiO2 thin films magnetron deposited on glass and Si substrates have been studied. Phase analysis and X-ray line broadening were studied by X-ray powder diffraction in parallel beam optics; the residual stresses were measured with the aid of the Eulerian cradle and surface roughness determined by X-ray reflectivity measurement. A set of amorphous films with different thickness was studied after annealing and also by in-situ measurements during the heating. It was found that the crystallization temperature started at about 250 °C for thicker films but it was higher for thinner films (< 200 nm) and reached about 350 °C. Thinner films were single phase (anatase) while thicker films above 1200 nm contained also a small amount of nanocrystalline rutile. The crystallite size of these samples immediately after crystallization was larger than 100 nm. (en)
  • Byly studovány vlastnosti tenkých amorfních vrstev TiO2 připravených na skleněné a Si substráty. In-situ a ex-situ XRD analýza byla využita k sledování vlivu žíhání na vlastnosti vrstev. Bylo zjištěno, že pro vrstvy s h>200nm se krystalizační teplota pohybuje okolo 250°C. U vrstev s nižší tloušťkou je tato teplota vyšší (T=350°C). Tenké vrstvy přitom po krystalizaci vykazovaly pouze krystalovou strukturu anatáz. Pro vrstvy s h>1200nm byla po krystalizaci detekována i krystalová fáze rutil. Velikost krystalů se ihned po krystalizaci pohybovala nad 100nm. (cs)
Title
  • Magnetron deposited TiO2 thin films crystallization and temperature dependence of microstructure and phase composition
  • Magnetron deposited TiO2 thin films crystallization and temperature dependence of microstructure and phase composition (en)
  • Vliv teploty na mikrostrukturu, fázové složení a krystalizaci vrstev TiO2 připravených magnetronovým naprašováním (cs)
skos:prefLabel
  • Magnetron deposited TiO2 thin films crystallization and temperature dependence of microstructure and phase composition
  • Magnetron deposited TiO2 thin films crystallization and temperature dependence of microstructure and phase composition (en)
  • Vliv teploty na mikrostrukturu, fázové složení a krystalizaci vrstev TiO2 připravených magnetronovým naprašováním (cs)
skos:notation
  • RIV/49777513:23520/07:00000046!RIV08-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 139
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  • P(GA106/06/0327), Z(MSM0021620834), Z(MSM4977751302)
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  • 0
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  • 431728
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  • RIV/49777513:23520/07:00000046
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  • titanium oxide; thin film crystallization; anneling; in-situ X-ray diffraction (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [F93F9A738C7A]
http://linked.open...i/riv/nazevZdroje
  • Materials Structure in Chemistry, Biology, Physics and Technology
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http://linked.open...vavai/riv/projekt
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http://linked.open...iv/tvurceVysledku
  • Musil, Jindřich
  • Šícha, Jan
  • Kužel, Radomír
  • Nichtová, L.
  • Matěj, Z.
http://linked.open...n/vavai/riv/zamer
issn
  • 1211-5894
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  • 23520
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