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Description
| - Novel quaternary Si-B-C-N films were fabricated using dc magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 °C. The films, typically 2-5 µm thick, were found to be amorphous in nanostructure with a low compressive stress (around 1 GPa) and good adhesion to substrates. They exhibited high hardness (up to 45 GPa) and elastic recovery (up to 85%), and extremely high oxidation resistance in air at elevated temperatures (up to a 1350 °C substrate limit).
- Novel quaternary Si-B-C-N films were fabricated using dc magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 °C. The films, typically 2-5 µm thick, were found to be amorphous in nanostructure with a low compressive stress (around 1 GPa) and good adhesion to substrates. They exhibited high hardness (up to 45 GPa) and elastic recovery (up to 85%), and extremely high oxidation resistance in air at elevated temperatures (up to a 1350 °C substrate limit). (en)
- Článek se zabývá novými kvaternárními materiály Si-B-C-N připravenými ve formě tenkých vrstev pomocí reaktivního magnetronového rozprašování křemíku, uhlíku a bóru ve směsích dusík-argon. Materiály vykázaly při amorfní nanostruktuře velmi nízké tlakové pnutí, dobrou adhezi k substrátům, vysokou tvrdost a elastické zotavení a extrémně vysokou oxidační odolnost ve vzduchu za teplot do 1350°C. (cs)
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Title
| - New quaternary Si-B-C-N films prepared by reactive magnetron sputtering
- New quaternary Si-B-C-N films prepared by reactive magnetron sputtering (en)
- Nové kvaternární tenké vrstvy Si-B-C-N připravené reaktivním magnetronovým naprašováním (cs)
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skos:prefLabel
| - New quaternary Si-B-C-N films prepared by reactive magnetron sputtering
- New quaternary Si-B-C-N films prepared by reactive magnetron sputtering (en)
- Nové kvaternární tenké vrstvy Si-B-C-N připravené reaktivním magnetronovým naprašováním (cs)
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skos:notation
| - RIV/49777513:23520/06:00000511!RIV07-MSM-23520___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23520/06:00000511
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Si-B-C-N; magnetron co-sputtering; mechanical properties; high-temperature stability; nanostructure (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Transactions of the Materials Research Society of Japan
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Houška, Jiří
- Zeman, Petr
- Vlček, Jaroslav
- Peřina, Vratislav
- Potocký, Štěpán
- Setsuhara, Yuichi
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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