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Description
| - This article reports on ternary Ta-Si-N films with a high content of Si sputtered from an alloyed TaSi2 target using an unbalanced dc magnetron. The films were deposited under the following conditions: magnetron discharge current Id=1 and 2A, negative s ubstrate bias Us, ranging from Ufl to -500V, substrate ion current density is=0.5 and 1mA/cm2, substrate temperature Ts ranging from 200 to 1000oC, substrate-to-terget distance ds-t=60mm, partial pressure of nitrogen pN2 ranging from 0 to 0.7 Pa and two values of a total pressure pT=PAr+pN2=0.5 and 0.7 Pa.
- This article reports on ternary Ta-Si-N films with a high content of Si sputtered from an alloyed TaSi2 target using an unbalanced dc magnetron. The films were deposited under the following conditions: magnetron discharge current Id=1 and 2A, negative s ubstrate bias Us, ranging from Ufl to -500V, substrate ion current density is=0.5 and 1mA/cm2, substrate temperature Ts ranging from 200 to 1000oC, substrate-to-terget distance ds-t=60mm, partial pressure of nitrogen pN2 ranging from 0 to 0.7 Pa and two values of a total pressure pT=PAr+pN2=0.5 and 0.7 Pa. (en)
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Title
| - Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si
- Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si (en)
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skos:prefLabel
| - Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si
- Physical and mechanical properties of sputtered Ta-Si-N films with a high content of Si (en)
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skos:notation
| - RIV/49777513:23520/03:00000234!RIV/2004/MSM/235204/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(ME 529), Z(MSM 235200002)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23520/03:00000234
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Ta-Si-N;deposition rate;electrical resistivity;macrostress;oxidation resistance (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Proceedings of the International Workshop on Designing Interfacial Structures in Advanced Materials and their Joints
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...ocetUcastnikuAkce
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http://linked.open...nichUcastnikuAkce
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Musil, Jindřich
- Zeman, Petr
- Zeman, Hynek
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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http://localhost/t...ganizacniJednotka
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