About: Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A description of mixed phase hydrogenated microcrystalline silicon (micro c-Si:H) geometry by a Voronoi network based on the growth in the grain neighborhoods is used as a basis for modelling electronic transport in micro c-Si:H. The experimentally observed evolution of the grain shape during growth is used to discuss enhancement of the internal electric field at the grain tip. A possibility of light focussing by a spherical grain cap is suggested. Coincidence of the focussed photogeneration with the high electric field region could lead to solar cells with photogeneration of carriers spatially separated according to the photon energy. A description of mixed phase hydrogenated microcrystalline silicon (micro c-Si:H) geometry by a Voronoi network based on the growth in the grain neighborhoods is used as a basis for modelling electronic transport in micro c-Si:H. The experimentally observed evolution of the grain shape during growth is used to discuss enhancement of the internal electric field at the grain tip. A possibility of light focussing by a spherical grain cap is suggested. Coincidence of the focussed photogeneration with the high electric field region could lead to solar cells with photogeneration of carriers spatially separated according to the photon energy. (en)
Title	Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance (en)
skos:prefLabel	Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance (en)
skos:notation	RIV/49610040:_____/04:00000005!RIV/2004/MZP/SOLAR4/N
http://linked.open.../vavai/riv/strany	303; 309
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA202/03/0789), P(SM/300/1/03)
http://linked.open...iv/cisloPeriodika	20040615
http://linked.open...vai/riv/dodaniDat	2004
http://linked.open...aciTvurceVysledku	Fejfar, Antonín Stuchlík, Jiří Mates, Tomáš
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Solartec s. r. o.
http://linked.open...dnocenehoVysledku	573904
http://linked.open...ai/riv/idVysledku	RIV/49610040:_____/04:00000005
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	thin film silicon solar cells; modelling of silicon growth; Voronoi network; internal light focussing; (en)
http://linked.open.../riv/klicoveSlovo	thin film silicon solar cells Voronoi network internal light focussing modelling of silicon growth
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[DE227FCED25F]
http://linked.open...i/riv/nazevZdroje	Journal of Non-Crystalline Solids
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	Reasech and development low cost technology of Solar Cells New silicon nanomaterials for optoelectronics
http://linked.open...UplatneniVysledku	2004
http://linked.open...v/svazekPeriodika	Volumes 33
http://linked.open...iv/tvurceVysledku	Fejfar, Antonín Stuchlík, Jiří Mates, Tomáš
issn	0022-3093
number of pages	7 (xsd:int)

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