About: Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations

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About: Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A phase field simulations of the polarisation reversal against the applied electric field in ferroelectric thin films, which is observed after poling of a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM), is presented. Recent advances in the development of hard-disk-like data storage device that uses ferroelectric nano-domains in ferroelectric single crystals stimulate the interest of scientists in the study of domain dynamics. It is known that free charges, which can be injected from the AFM tip during the polarization reversal process into the ferroelectric film or on its surface, have a great effect on the stability of the reversed domains and can yield to several quite different scenarios during the domain reversal process. Since the role of free charges is not understood in great details yet, the aforementioned issues have motivated the study presented in this paper, where we will analyse the role of free charges during the polarization reversal process using phase field simulations. A phase field simulations of the polarisation reversal against the applied electric field in ferroelectric thin films, which is observed after poling of a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM), is presented. Recent advances in the development of hard-disk-like data storage device that uses ferroelectric nano-domains in ferroelectric single crystals stimulate the interest of scientists in the study of domain dynamics. It is known that free charges, which can be injected from the AFM tip during the polarization reversal process into the ferroelectric film or on its surface, have a great effect on the stability of the reversed domains and can yield to several quite different scenarios during the domain reversal process. Since the role of free charges is not understood in great details yet, the aforementioned issues have motivated the study presented in this paper, where we will analyse the role of free charges during the polarization reversal process using phase field simulations. (en)
Title	Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations (en)
skos:prefLabel	Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations (en)
skos:notation	RIV/46747885:24220/11:#0001790!RIV12-GA0-24220___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP204/10/0616)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Nováková, Kateřina Sluka, Tomáš Mokrý, Pavel
http://linked.open.../riv/druhVysledku	A(V) - Audiovizuální tvorba se vzdáleným přístupem
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Technická univerzita v Liberci / Fakulta mechatroniky, informatiky a mezioborových studií
http://linked.open...dnocenehoVysledku	195244
http://linked.open...ai/riv/idVysledku	RIV/46747885:24220/11:#0001790
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Ferroelectric semiconductors; Wide band-gap semiconductors; Spontaneous polarization; Atomic force microscopy; Reversed domain nucleation; Domain back-switching (en)
http://linked.open.../riv/klicoveSlovo	Atomic force microscopy Domain back-switching Ferroelectric semiconductors Reversed domain nucleation Spontaneous polarization Wide band-gap semiconductors
http://linked.open...i/riv/kodPristupu	L
http://linked.open...ontrolniKodProRIV	[A84850481E0C]
http://linked.open...i/riv/mistoVydani	Vancouver BC, Canada
http://linked.open...n/vavai/riv/nosic	PFM-ISAF-2011, Vancouver, Canada
http://linked.open...telVyzkumneZpravy	Simon Fraser University, Vancouver, Canada
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Modern piezoelectric perovskites: lattice vibrations and domain walls
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Mokrý, Pavel Nováková, Kateřina Sluka, Tomáš
http://localhost/t...ganizacniJednotka	24220

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