| Attributes | Values |
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| rdf:type
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| Description
| - Vrstva c-Si(001) byla vystavena nízkotlakému kyslíkovému plazmatu s automatickým předpětím substrátu od ?60 do ?600 V za účelem vyhodnocení interakcí iontů s povrchem při výrobě velmi kvalitních optických vrstev. Interakce byly monitorovány in situ s využitím spektroskopické elipsometrie v reálném čase (RTSE), která odhaluje závislosti modifikace na čase nebo toku iontů (poruchy, oxidace pod povrchem c-Si). RTSE analýza ukazuje na téměř okamžité tvoření poruch ( 1 s) do hloubky několika nanometrů pod povrchem po vystavení malému toku kyslíkových iontů (~5x1014 O cm?2). Růst oxidu je detekován při středním toku (~1015?1016 O cm?2) a je připisován implantaci kyslíku do malé hloubky. Na povrchu terče se vytváří vrstva s velmi malým obsahem kyslíku. Při vysokém toku (>1017 O cm?2) je pozorován růst limitovaný hloubkou průniku iontů od ~ 3,6 do 9,5 nm pro předpětí ?60 do ?600 V. Experimentální pozorování bylo doplněno počítačovou simulací založenou na metodě Monte Carlo. Byl použit program Tridyn (cs)
- Low-pressure O2 plasma exposures were performed on c-Si(001) at a radio frequency (rf)-powered electrode in the presence of substrate self-biasing (VB) from VB=?60 to ?600 V, in order to evaluate ion-surface interactions at the growth surface under ion bombardment conditions suitable for the fabrication of high quality optical coatings. The plasma-surface interactions were monitored in situ using real-time spectroscopic ellipsometry (RTSE), which reveals time- and ion-fluence-resolved information about depth-dependent modifications, such as damage and oxidation below the c-Si substrate surface. RTSE analysis indicates almost immediate damage formation ( 1 s) to a depth of a few nanometers below the surface after exposure to a low oxygen ion fluence (~5x1014 O cm?2). Oxide growth is detected at intermediate fluence (~1015?1016 O cm?2) and is attributed to O subplantation (shallow implantation); it forms near the surface of the target on top of an O-deficient interfacial damage layer (DL). Both
- Low-pressure O2 plasma exposures were performed on c-Si(001) at a radio frequency (rf)-powered electrode in the presence of substrate self-biasing (VB) from VB=?60 to ?600 V, in order to evaluate ion-surface interactions at the growth surface under ion bombardment conditions suitable for the fabrication of high quality optical coatings. The plasma-surface interactions were monitored in situ using real-time spectroscopic ellipsometry (RTSE), which reveals time- and ion-fluence-resolved information about depth-dependent modifications, such as damage and oxidation below the c-Si substrate surface. RTSE analysis indicates almost immediate damage formation ( 1 s) to a depth of a few nanometers below the surface after exposure to a low oxygen ion fluence (~5x1014 O cm?2). Oxide growth is detected at intermediate fluence (~1015?1016 O cm?2) and is attributed to O subplantation (shallow implantation); it forms near the surface of the target on top of an O-deficient interfacial damage layer (DL). Both (en)
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| Title
| - Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study
- Dynamika modifikací Si(001) vyvolaná iontovým bombardem v nízkotlakém kyslíkovém plazmatu: In situ spektroskopická elipsometrie a Monte Carlo simulace (cs)
- Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study (en)
|
| skos:prefLabel
| - Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study
- Dynamika modifikací Si(001) vyvolaná iontovým bombardem v nízkotlakém kyslíkovém plazmatu: In situ spektroskopická elipsometrie a Monte Carlo simulace (cs)
- Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study (en)
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| skos:notation
| - RIV/44555601:13440/06:00003275!RIV07-MSM-13440___
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| http://linked.open.../vavai/riv/strany
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/44555601:13440/06:00003275
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| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - plasma deposition; RTSE; Monte Carlo (en)
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| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Journal of Applied Physics
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
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| http://linked.open...UplatneniVysledku
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| http://linked.open...v/svazekPeriodika
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| http://linked.open...iv/tvurceVysledku
| - Švec, Martin
- Amassian, Aram
- Desjardins, Partick
- Martinu, Ludvik
|
| issn
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| number of pages
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| http://localhost/t...ganizacniJednotka
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