About: Preparation and Characterization of SnO2 Films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Thin SnO2 films have wide range of applications (electronics, special coatings, etc.). Mostly, it is used when conductivity and transparency is required or in gas sensors. Tin oxide films can be prepared by many techniques such as chemical vapour deposition, spray pyrolysis, evaporation, and sputtering [1,2]. We have studied properties of SnO2 thin films produced by a thermal evaporation of Sn films followed by in situ plasma oxidation 3 . The structure of such SnO2 films and also their chemical and physical properties depend on parameters governing the growth during plasma oxidation, e.g. on both the plasma parameters and the substrate temperature. The influence of annealing and substrate heating during oxidation on the surface structure, composition, and electrical conductance of SnO2 films were studied. Thin SnO2 films have wide range of applications (electronics, special coatings, etc.). Mostly, it is used when conductivity and transparency is required or in gas sensors. Tin oxide films can be prepared by many techniques such as chemical vapour deposition, spray pyrolysis, evaporation, and sputtering [1,2]. We have studied properties of SnO2 thin films produced by a thermal evaporation of Sn films followed by in situ plasma oxidation 3 . The structure of such SnO2 films and also their chemical and physical properties depend on parameters governing the growth during plasma oxidation, e.g. on both the plasma parameters and the substrate temperature. The influence of annealing and substrate heating during oxidation on the surface structure, composition, and electrical conductance of SnO2 films were studied. (en)
Title	Preparation and Characterization of SnO2 Films Preparation and Characterization of SnO2 Films (en)
skos:prefLabel	Preparation and Characterization of SnO2 Films Preparation and Characterization of SnO2 Films (en)
skos:notation	RIV/44555601:13430/03:00002341!RIV/2004/MSM/134304/N
http://linked.open.../vavai/riv/strany	20
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(OC 527.50)
http://linked.open...vai/riv/dodaniDat	2004
http://linked.open...aciTvurceVysledku	Strýhal, Zdeněk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Jana Evangelisty Purkyně v Ústí nad Labem / Pedagogická fakulta
http://linked.open...dnocenehoVysledku	622685
http://linked.open...ai/riv/idVysledku	RIV/44555601:13430/03:00002341
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	oxidation, SnO2 (en)
http://linked.open.../riv/klicoveSlovo	oxidation SnO2
http://linked.open...ontrolniKodProRIV	[86C5DAE231C8]
http://linked.open...v/mistoKonaniAkce	Kagoshima - Japan
http://linked.open...i/riv/mistoVydani	Kaghoshima
http://linked.open...i/riv/nazevZdroje	The 41st Symposium on Basic of Ceramics
http://linked.open...in/vavai/riv/obor	BL
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	http://linked.opendata.cz/resource/domain/vavai/projekt/OC%20527.50
http://linked.open...UplatneniVysledku	2003
http://linked.open...iv/tvurceVysledku	Strýhal, Zdeněk Haneda, Hajime Hishita, Shunichi
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2003-01-22 (xsd:date)
number of pages	1 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Ceramic Society of Japan
http://localhost/t...ganizacniJednotka	13430

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