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  • In this work, we have studied properties of SnO2 thin films produced by thermal evaporation of Sn films followed by in situ plasma oxidation. The layer properties were studied by atomic force microscopy, Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The surface morphology of the tin films is characterized with a near flat-grain structure appearance and a root mean square rougness Rq - 12 nm. The typical grain size of the tin films was about 0,5 um. Surface morphology of the tin dioxide is characterized by a sharper grain structure with a higher roughness Rq - 14 nm.Th etypical grain size was about 0,2 um in this case. The SnO2 films prepared by plasma oxidation at long oxidation times led to a higher thickness of oxide layers and it varied from 37 to 65 nm when oxidation time varied from 10 and 20 min. This work gives information about the feasibility of presented diagnostic methods for characterization of SnO2 thin films prepared by plasma oxidation.
  • In this work, we have studied properties of SnO2 thin films produced by thermal evaporation of Sn films followed by in situ plasma oxidation. The layer properties were studied by atomic force microscopy, Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The surface morphology of the tin films is characterized with a near flat-grain structure appearance and a root mean square rougness Rq - 12 nm. The typical grain size of the tin films was about 0,5 um. Surface morphology of the tin dioxide is characterized by a sharper grain structure with a higher roughness Rq - 14 nm.Th etypical grain size was about 0,2 um in this case. The SnO2 films prepared by plasma oxidation at long oxidation times led to a higher thickness of oxide layers and it varied from 37 to 65 nm when oxidation time varied from 10 and 20 min. This work gives information about the feasibility of presented diagnostic methods for characterization of SnO2 thin films prepared by plasma oxidation. (en)
Title
  • Investigations of SnO2 thin films prepared by plasma oxidation.
  • Investigations of SnO2 thin films prepared by plasma oxidation. (en)
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  • Investigations of SnO2 thin films prepared by plasma oxidation.
  • Investigations of SnO2 thin films prepared by plasma oxidation. (en)
skos:notation
  • RIV/44555601:13430/02:00001973!RIV/2003/MSM/134303/N
http://linked.open.../vavai/riv/strany
  • 665-671
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  • P(LI200068), P(OC 527.50), Z(MSM 134300001)
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  • 3
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  • 649698
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  • RIV/44555601:13430/02:00001973
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  • SnO2 thin film, Plasma oxidation, AFM, RBS, XPS, sensor (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [73C1E5D2B8CC]
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  • 67
http://linked.open...iv/tvurceVysledku
  • Macková, Anna
  • Pavlík, Jaroslav
  • Novák, Stanislav
  • Strýhal, Zdeněk
  • Veltruská, K.
  • Peřina, Václav
http://linked.open...n/vavai/riv/zamer
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  • 0042-207X
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  • 13430
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