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  • Plasma oxidation, utilising oxygen or oxygen/argon plasma, is one of the low temperature techniques used to grow of dielectric films on metal and semiconductor surfaces. In this work, we have studied surface properties of Al2O3 and SnO2 thin films prepared by plasma oxidation. The oxidPe surface structure was measured by Atomic Force Microscopy (AFM). The composition, thickness and stoichiometry of oxide films were measured by Rutherford Backscattering Spectrometry (RBS). The experimental techniques arecombined with computer experiment, which was used in order to discuss the importance of various physical and chemical processes taking part during the plasma oxidation of metals. This computer experiment consists of set of models following various stage s of real experiment.
  • Plasma oxidation, utilising oxygen or oxygen/argon plasma, is one of the low temperature techniques used to grow of dielectric films on metal and semiconductor surfaces. In this work, we have studied surface properties of Al2O3 and SnO2 thin films prepared by plasma oxidation. The oxidPe surface structure was measured by Atomic Force Microscopy (AFM). The composition, thickness and stoichiometry of oxide films were measured by Rutherford Backscattering Spectrometry (RBS). The experimental techniques arecombined with computer experiment, which was used in order to discuss the importance of various physical and chemical processes taking part during the plasma oxidation of metals. This computer experiment consists of set of models following various stage s of real experiment. (en)
Title
  • Plasma Oxidation of Thin Metal Films - Experiment and Modelling
  • Plasma Oxidation of Thin Metal Films - Experiment and Modelling (en)
skos:prefLabel
  • Plasma Oxidation of Thin Metal Films - Experiment and Modelling
  • Plasma Oxidation of Thin Metal Films - Experiment and Modelling (en)
skos:notation
  • RIV/44555601:13430/02:00001952!RIV/2003/MSM/134303/N
http://linked.open.../vavai/riv/strany
  • 351-352
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(OC 527.50)
http://linked.open...vai/riv/dodaniDat
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  • 658400
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  • RIV/44555601:13430/02:00001952
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  • Plasma oxidation of tin and aluminium thin films , AFM, RBS, computer modeling (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [EE0C3923EFFE]
http://linked.open...v/mistoKonaniAkce
  • Grenoble, Francie
http://linked.open...i/riv/mistoVydani
  • Grenoble, Francie
http://linked.open...i/riv/nazevZdroje
  • Conference Proceedings of Joint Conference ESCAMPIG 16
http://linked.open...in/vavai/riv/obor
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  • Hrach, Rudolf
  • Macková, Anna
  • Pavlík, Jaroslav
  • Strýhal, Zdeněk
  • Vicher, Miroslav
  • Peřina, Václav
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
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  • Centre national de la recherche scientifique
http://localhost/t...ganizacniJednotka
  • 13430
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