About: The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films

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About: The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Plasma oxidation, utilising highly activated oxygen or oxygen/argon plasma, is one of the low temperature technigues used to grow of dielectric films on metal and semiconductor surfaces. The paper deals with a comparative study of plasma characteristics and thin Al2O3 and SnO2 films surface properties. The surface structure of oxide films was studied by Atomic Force Microscopy (AFM). Plasma oxidation, utilising highly activated oxygen or oxygen/argon plasma, is one of the low temperature technigues used to grow of dielectric films on metal and semiconductor surfaces. The paper deals with a comparative study of plasma characteristics and thin Al2O3 and SnO2 films surface properties. The surface structure of oxide films was studied by Atomic Force Microscopy (AFM). (en)
Title	The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films (en)
skos:prefLabel	The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films The Influence of Technological Parameters on the Surface Structure of Oxide Films Prepared by Plasma Oxidation of Thin Metal Films (en)
skos:notation	RIV/44555601:13430/01:00001437!RIV/2002/MSM/134302/N
http://linked.open.../vavai/riv/strany	167-168
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(OC 527.50), P(OK 401), Z(MSM 134300001)
http://linked.open...vai/riv/dodaniDat	2002
http://linked.open...aciTvurceVysledku	Pavlík, Jaroslav Novák, Stanislav Strýhal, Zdeněk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Jana Evangelisty Purkyně v Ústí nad Labem / Pedagogická fakulta
http://linked.open...dnocenehoVysledku	682875
http://linked.open...ai/riv/idVysledku	RIV/44555601:13430/01:00001437
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	SnO2, Al2O3, plasma oxidation, AFM (en)
http://linked.open.../riv/klicoveSlovo	Al2O3 SnO2 AFM plasma oxidation
http://linked.open...ontrolniKodProRIV	[C0DCE6347921]
http://linked.open...v/mistoKonaniAkce	Nagoya
http://linked.open...i/riv/mistoVydani	Nagoya, JAPAN
http://linked.open...i/riv/nazevZdroje	Proceedings XXV ICPIG - International Conference on Phenomena in Ionized Gases
http://linked.open...in/vavai/riv/obor	BL
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	http://linked.opendata.cz/resource/domain/vavai/projekt/OK%20401 http://linked.opendata.cz/resource/domain/vavai/projekt/OC%20527.50
http://linked.open...UplatneniVysledku	2001
http://linked.open...iv/tvurceVysledku	Pavlík, Jaroslav Novák, Stanislav Strýhal, Zdeněk
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2001-07-17 (xsd:date)
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20134300001
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Nagoya University
https://schema.org/isbn	4-9900915-1-5
http://localhost/t...ganizacniJednotka	13430

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