About: Humidity resistant hydrogenated carbon nitride films

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The aim of this study is to prepare the hydrogenated carbon nitrides films which possess good adhesion to silicon substrates and stability in humid surroundings. The films were prepared by magnetron sputtering from pure graphite target in a nitrogen-hydrogen discharge. Two main factors can lead to delamination of the films. The first is the high value of residual stress and the second is the absorption of moisture into the bulk and their affect on films/substrates interface. Both factors were eliminated by adding hydrogen and post-deposition annealing in the vacuum. The influence of annealing (to 200, 400, 600, 800 and 1000 C) on chemical composition and microstructure was studied by various methods. For preparation of humidity (water) resistant films we have added 15% partial pressure of hydrogen to nitrogen discharge and annealed the samples in vacuum to minimum temperature, which was 600 C. The heating to 600 C causes the increasing of carbon – nitride ratio from 2.0 to 2.4 and the relative atomi The aim of this study is to prepare the hydrogenated carbon nitrides films which possess good adhesion to silicon substrates and stability in humid surroundings. The films were prepared by magnetron sputtering from pure graphite target in a nitrogen-hydrogen discharge. Two main factors can lead to delamination of the films. The first is the high value of residual stress and the second is the absorption of moisture into the bulk and their affect on films/substrates interface. Both factors were eliminated by adding hydrogen and post-deposition annealing in the vacuum. The influence of annealing (to 200, 400, 600, 800 and 1000 C) on chemical composition and microstructure was studied by various methods. For preparation of humidity (water) resistant films we have added 15% partial pressure of hydrogen to nitrogen discharge and annealed the samples in vacuum to minimum temperature, which was 600 C. The heating to 600 C causes the increasing of carbon – nitride ratio from 2.0 to 2.4 and the relative atomi (en)
Title	Humidity resistant hydrogenated carbon nitride films Humidity resistant hydrogenated carbon nitride films (en)
skos:prefLabel	Humidity resistant hydrogenated carbon nitride films Humidity resistant hydrogenated carbon nitride films (en)
skos:notation	RIV/00216305:26620/13:PU103576!RIV14-MSM-26620___
http://linked.open...avai/riv/aktivita	I P Z
http://linked.open...avai/riv/aktivity	I, P(ED0017/01/01), P(ED1.1.00/02.0068), P(GAP204/12/0595), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Polčák, Josef
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	78347
http://linked.open...ai/riv/idVysledku	RIV/00216305:26620/13:PU103576
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Hydrogenated carbon nitride films, Magnetron sputtering, Compressive stress, Desorption, High resolution scanning low energy electron microscopy (en)
http://linked.open.../riv/klicoveSlovo	Desorption Magnetron sputtering High resolution scanning low energy electron microscopy Hydrogenated carbon nitride films Compressive stress
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[09A53FF40B24]
http://linked.open...i/riv/nazevZdroje	Applied Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	APPLICATION LABORATORIES OF ADVANCED MICROTECHNOLOGIES AND NANOTECHNOLOGIES Central european institute of technology Electronic and structural properties of three-dimensional topological insulators
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	275
http://linked.open...iv/tvurceVysledku	Sobota, Jaroslav Caha, Ondřej Peřina, Vratislav Mikmeková, Eliška Müllerová, Ilona Polčák, Josef
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
issn	0169-4332
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	26620

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