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  • The aim of this study is to elucidate the influence of metal electrode and dielectric surface modifications on the performance of 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4-dione (referred as DPP(TBFu)2) based organic field effect transistors (OFETs). The performance of OFETs is dependent on the charge carrier injection from contact and their transport within the first organic semiconductor (OSC) monolayers at the interface with the gate dielectric. The application of organosilane self-assembled monolayers (SAMs) on gate-dielectrics (SiO2) induced two orders of magnitude increase of charge carrier mobility. The processing of the transistor electrodes aims to reduce the contact resistance (Rc) at the interface with the OSC, which influences injection and extraction of charge carriers. In the case of the hole injection barrier (p-type OSCs), i.e., the difference between the ionization potential of OSC and the Fermi level of metal electrode, the contact resi
  • The aim of this study is to elucidate the influence of metal electrode and dielectric surface modifications on the performance of 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl) pyrrolo[3,4-c]pyrrole-1,4-dione (referred as DPP(TBFu)2) based organic field effect transistors (OFETs). The performance of OFETs is dependent on the charge carrier injection from contact and their transport within the first organic semiconductor (OSC) monolayers at the interface with the gate dielectric. The application of organosilane self-assembled monolayers (SAMs) on gate-dielectrics (SiO2) induced two orders of magnitude increase of charge carrier mobility. The processing of the transistor electrodes aims to reduce the contact resistance (Rc) at the interface with the OSC, which influences injection and extraction of charge carriers. In the case of the hole injection barrier (p-type OSCs), i.e., the difference between the ionization potential of OSC and the Fermi level of metal electrode, the contact resi (en)
Title
  • The influence of solution-processed small-molecule semiconductor to control of OFET properties
  • The influence of solution-processed small-molecule semiconductor to control of OFET properties (en)
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  • The influence of solution-processed small-molecule semiconductor to control of OFET properties
  • The influence of solution-processed small-molecule semiconductor to control of OFET properties (en)
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  • RIV/00216305:26310/14:PU112355!RIV15-MSM-26310___
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  • 21607
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  • RIV/00216305:26310/14:PU112355
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  • Organic Semiconductors, OFET, Contact Resistance, SAM, PFTP, HMDS (en)
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  • [AE4458AE6415]
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  • Purkyňova 118, 612 00 Brno
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  • Studentská odborná konference Chemie je život 2014
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  • Stříteský, Stanislav
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  • Vysoké učení technické v Brně, Fakulta chemická, Purkyňova 464/118, 612 00 Brno
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  • 978-80-214-5077-6
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  • 26310
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