About: Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

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About: Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal co The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal co (en)
Title	Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching (en)
skos:prefLabel	Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching (en)
skos:notation	RIV/00216305:26220/14:PU111398!RIV15-MSM-26220___
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(ED2.1.00/03.0072), S
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Tománek, Pavel Grmela, Lubomír Dallaeva, Dinara Prokopyeva, Elena
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	22396
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/14:PU111398
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	etching, sapphire, silicon carbide, substrate, interferometry, atomic force microscopy (en)
http://linked.open.../riv/klicoveSlovo	etching silicon carbide substrate sapphire interferometry atomic force microscopy
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[ACD0326D7E62]
http://linked.open...i/riv/nazevZdroje	Proceedings. The Computer Security Foundations Workshop III
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Centre of sensor, information and communication systems
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	2014
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Tománek, Pavel Dallaeva, Dinara Ramazanov, Shihgasan Prokopyeva, Elena
issn	1063-6900
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/ISOT.2014.76
http://localhost/t...ganizacniJednotka	26220

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