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  • Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects.
  • Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects. (en)
Title
  • Microstructure defects in silicon solar cells
  • Microstructure defects in silicon solar cells (en)
skos:prefLabel
  • Microstructure defects in silicon solar cells
  • Microstructure defects in silicon solar cells (en)
skos:notation
  • RIV/00216305:26220/13:PU106135!RIV14-GA0-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ED1.1.00/02.0068), P(GAP102/11/0995), P(LH11060)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 88247
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/13:PU106135
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  • solar cell, silicon, defect, inhomogeneity, breakdown, microsctructure, measurement (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [B9C7D0E7025E]
http://linked.open...v/mistoKonaniAkce
  • Snolenice
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  • Bratislava
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  • Proceedings of 8th Solid state surfaces and intefaces
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  • Grmela, Lubomír
  • Koktavý, Pavel
  • Macků, Robert
  • Tománek, Pavel
  • Šicner, Jiří
  • Škarvada, Pavel
  • Dallaeva, Dinara
  • Vondra, Marek
  • Smith, Steve J.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
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  • Univerzita Komenského v Bratislave
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  • 978-80-223-3501-0
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  • 26220
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