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  • This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process.
  • This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process. (en)
Title
  • Study of Dry Etching Process for Substrates Preparation
  • Study of Dry Etching Process for Substrates Preparation (en)
skos:prefLabel
  • Study of Dry Etching Process for Substrates Preparation
  • Study of Dry Etching Process for Substrates Preparation (en)
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  • RIV/00216305:26220/13:PU105512!RIV14-MSM-26220___
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  • P(ED2.1.00/03.0072)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 108678
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  • RIV/00216305:26220/13:PU105512
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  • physical etching, substrate, silicon carbide, sapphire (en)
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  • [F330567123E9]
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  • Brno
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  • Brno
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  • International Interdisciplinary PhD Workshop 2013
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  • Klampár, Marián
  • Tománek, Pavel
  • Dallaeva, Dinara
  • Ramazanov, Shihgasan
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number of pages
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  • Vysoké učení technické v Brně
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  • 978-80-214-4759-2
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  • 26220
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