About: %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors     Goto   Sponge   NotDistinct   Permalink

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  • Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100 C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing. (en)
  • Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.
  • Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing. (cs)
Title
  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors (en)
  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors (cs)
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  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors (en)
  • %22Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors (cs)
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  • RIV/00216305:26220/13:PU105018!RIV14-MSM-26220___
http://linked.open...avai/riv/aktivita
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  • P(ED2.1.00/03.0072)
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  • 71542
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  • RIV/00216305:26220/13:PU105018
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  • CdTe, šum, spolehlivost (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [4DDF88293AC8]
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  • Kuala Lumpur
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  • Kuala Lumpur, Malaisie
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  • Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits
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  • Grmela, Lubomír
  • Trčka, Tomáš
  • Šik, Ondřej
  • Vondra, Marek
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number of pages
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  • Institute of Research Engineers and Doctors
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  • 978-981-07-6261-2
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  • 26220
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