About: Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

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About: Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1142/S0218126613500734
Description	This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit. This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit. (en)
Title	Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique (en)
skos:prefLabel	Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique (en)
skos:notation	RIV/00216305:26220/13:PU104397!RIV14-MPO-26220___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0072), P(FR-TI3/485), P(GAP102/11/1379)
http://linked.open...iv/cisloPeriodika	8, IF: 0.2
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Fujcik, Lukáš Khateb, Fabian Khatib, Nabhan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	112461
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/13:PU104397
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Floating-gate MOST, quasi-floating-gate MOST, bulk-driven MOST, transconductor. (en)
http://linked.open.../riv/klicoveSlovo	bulk-driven MOST quasi-floating-gate MOST transconductor. Floating-gate MOST
http://linked.open...odStatuVydavatele	SG - Singapurská republika
http://linked.open...ontrolniKodProRIV	[D9D34B091AB8]
http://linked.open...i/riv/nazevZdroje	JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of sensor, information and communication systems Engineering structure state monitoring by the means of electrically conductive elements with modified cement matrix Novel Intelligent Submicron Structures and Microsystems for Advanced Microsensors
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	2013 (22)
http://linked.open...iv/tvurceVysledku	Fujcik, Lukáš Khateb, Fabian Khatib, Nabhan Jaikla, Winai Prommee, Pipat
http://linked.open...ain/vavai/riv/wos	000324836400011
issn	0218-1266
number of pages	13 (xsd:int)
http://bibframe.org/vocab/doi	10.1142/S0218126613500734
http://localhost/t...ganizacniJednotka	26220

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