About: Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements     Goto   Sponge   NotDistinct   Permalink

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  • The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
  • The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example. (en)
Title
  • Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
  • Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements (en)
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  • Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
  • Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements (en)
skos:notation
  • RIV/00216305:26220/13:PU103727!RIV14-GA0-26220___
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  • I, P(ED2.1.00/03.0072), P(EE2.3.20.0007), P(GAP102/10/1614)
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  • 1
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  • 60763
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  • RIV/00216305:26220/13:PU103727
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  • Memory element, memristor, pinched hysteresis loop (en)
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  • CZ - Česká republika
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  • [C80F18EF10C5]
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  • Radioengineering
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  • 22
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  • Biolek, Dalibor
  • Biolková, Viera
  • Biolek, Zdeněk
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  • 1210-2512
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  • 26220
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