About: Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors

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About: Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.sciencedirect.com/science/article/pii/S0040609012002295#
Description	Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic t Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al-Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). The films were examined by scanning and transmission electron microscopy and electrochemical impedance spectroscopy. Integral capacitors utilizing the anodic films as dielectrics combine the small-value capacitance (6.5 nF cm-2) with the excellent properties of high withstand field strength, low leakage current, and low loss tangent. The revealed dispersion of dielectric constant, and the presence of loss peaks on the temperature and frequency dependencies of losses denote the influence of ion-relaxation mechanism on dielectrics polarizability, with the characteristic t (en)
Title	Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors (en)
skos:prefLabel	Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors Nanostructured anodic-alumina-based dielectrics for high-frequency integral capacitors (en)
skos:notation	RIV/00216305:26220/12:PU101609!RIV13-MSM-26220___
http://linked.open...avai/riv/aktivita	R
http://linked.open...avai/riv/aktivity	R
http://linked.open...iv/cisloPeriodika	-
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Hubálek, Jaromír Mozalev, Alexander
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	152968
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PU101609
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	porous alumina, tantalum oxide, nanostructure, dielectric properties, electric polarization, integral capacitors, high-frequency performance (en)
http://linked.open.../riv/klicoveSlovo	porous alumina dielectric properties electric polarization tantalum oxide high-frequency performance integral capacitors nanostructure
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[C63648326639]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	-
http://linked.open...iv/tvurceVysledku	Hubálek, Jaromír Mozalev, Alexander Habazaki, Hiroki Sakairi, Masatoshi Takahashi, Hideaki
issn	0040-6090
number of pages	9 (xsd:int)
http://localhost/t...ganizacniJednotka	26220

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