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rdf:type
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Description
| - The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes.
- The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes. (en)
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Title
| - Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy
- Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy (en)
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skos:prefLabel
| - Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy
- Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy (en)
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skos:notation
| - RIV/00216305:26220/12:PU100264!RIV14-MSM-26220___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(ED2.1.00/03.0072), P(GAP102/11/0995), P(LH11060), S
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/12:PU100264
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - compostion, morphology, temperature, sublimation (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Optics and Measurement 2012
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Tománek, Pavel
- Bilalov, Bilal
- Dallaeva, Dinara
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - Institute of Plasma Physics AS CR, v.v.i. - TOPTEC
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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