About: Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors

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About: Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.umel.feec.vutbr.cz/LabSensNano/Products.aspx
Description	Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al 1.5 at.% Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised 1 um thick nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al 1.5 at.% Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised 1 um thick nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer). (en)
Title	Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors (en)
skos:prefLabel	Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors (en)
skos:notation	RIV/00216305:26220/12:PR26575!RIV13-MSM-26220___
http://linked.open...avai/riv/aktivita	R
http://linked.open...avai/riv/aktivity	R
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Hubálek, Jaromír Mozalev, Alexander
http://linked.open.../riv/druhVysledku	G/B - Funkční vzorek
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...onomickeParametry	The technology enables high-volume, low-cost solution for electronics and microelectronics Costs for developing 300.000 CZK
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	152966
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PR26575
http://linked.open...terniIdentifikace	nano dielectrics
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open...vai/riv/kategorie	A - Do 5 mil. Kč
http://linked.open.../riv/klicovaSlova	porous alumina, tantalum oxide, nanostructure, dielectric properties, electric polarization, integral capacitors, high-frequency performance (en)
http://linked.open.../riv/klicoveSlovo	porous alumina dielectric properties electric polarization tantalum oxide high-frequency performance integral capacitors nanostructure
http://linked.open...ontrolniKodProRIV	[DEB7AAE8919D]
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...echnickeParametry	Precursor films used: Al (99.99%), Al 1.5at.%Si alloy, Al(99,99%)/Ta(99.95%) bilayer; film thicknesses: Al=2000 nm, Al-Si alloy=2000 nm, Al/Ta=700/250 nm; specific capacitance ... 6.5 nF cm-2, dielectric constant ... 7.3-7.35; loss tangent ... (40-60)x10E-4, leakage current at at 1.0 MV cm-1 ... 3x10E-12 Breakdown voltage ... 170-270 V Funkční vzorek byl na základě získaných poznatků zkonstruován a ověřen. Je využíván na pracovišti řešitele LabSensNano (VUT v Brně, Fakulta elektrotechniky a komunikačních technologií, Ústav mikroelektroniky, Technická 3058/10, 616 00 Brno, Česká republika)
http://linked.open...iv/tvurceVysledku	Hubálek, Jaromír Mozalev, Alexander
http://linked.open...avai/riv/vlastnik	Ústav mikroelektroniky
http://linked.open...itiJinymSubjektem	N - Nabytí licence není nutné (výsledek není licencován)
http://localhost/t...ganizacniJednotka	26220

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