About: TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows, The paper has focused on analysis of noise measurement in Ta2O5 insulating films. Tan-talum pent-oxide thin films are used as dielectric layers for capacitors. Tantalum capacitors show high relative permittivity, low leakage current density and high reliability. The capacitor is here presented as a MIS structure where cathode is formed by manganese-dioxide (with semiconductor conductivity) and anode is formed by tantalum (with metal conductivity). Capacitor is operated in normal mode when the anode is positive and in reverse mode when the cathode is positive. The measurement set-up allows the low frequency noise and capacity measurements in the wide tem-perature range. The Ta2O5 films of the thickness about 28 nm were examined. The current noise spectral density was analyzed for the temperature range from 10 to 400 K. GR noise and 1/fa noise are observed in the low frequency region with exponent a varying between 1 and 1.5. From the measurement of sample capacity for different temperatures it follows, (en)
Title	TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS (en)
skos:prefLabel	TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS TEMPERATURE DEPENDENCE OF LOW FREQUENCY NOISE IN TA2O5 FILMS (en)
skos:notation	RIV/00216305:26220/11:PU93448!RIV12-MSM-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Kopecký, Martin
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	234593
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU93448
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	tantalum, 1/f noise, Ta2O5, GR noise (en)
http://linked.open.../riv/klicoveSlovo	1/f noise tantalum GR noise Ta2O5
http://linked.open...ontrolniKodProRIV	[E029FCEDF797]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	nam. Republiky 15 614 00 Brno
http://linked.open...i/riv/nazevZdroje	PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Kopecký, Martin
http://linked.open...vavai/riv/typAkce	CST - Celostátní
http://linked.open.../riv/zahajeniAkce	2011-04-28 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	NOVPRESS s.r.o.
https://schema.org/isbn	978-80-214-4079-1
http://localhost/t...ganizacniJednotka	26220

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