About: Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability

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About: Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited by the field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s. Activation energ The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited by the field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s. Activation energ (en)
Title	Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability (en)
skos:prefLabel	Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability (en)
skos:notation	RIV/00216305:26220/10:PU90363!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Majzner, Jiří Sedláková, Vlasta Šikula, Josef Navarová, Hana Chvátal, Miloš Zedníček, Tomáš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	291810
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU90363
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Tantalum, Niobium, Oxide, Crystallization, Leakage Current Kinetics, Reliability (en)
http://linked.open.../riv/klicoveSlovo	Leakage Current Kinetics Crystallization Reliability Oxide Tantalum Niobium
http://linked.open...ontrolniKodProRIV	[F655ED802EEB]
http://linked.open...v/mistoKonaniAkce	Niš
http://linked.open...i/riv/mistoVydani	Niš
http://linked.open...i/riv/nazevZdroje	27th International Conference on Microelectronics MIEL 2010
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Majzner, Jiří Sedláková, Vlasta Šikula, Josef Navarová, Hana Zedníček, Tomáš Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-05-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	MIEL
https://schema.org/isbn	978-1-4244-7200-0
http://localhost/t...ganizacniJednotka	26220

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