About: Performance Testing of a MOSFET Sensor

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types. MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types. (en)
Title	Performance Testing of a MOSFET Sensor Performance Testing of a MOSFET Sensor (en)
skos:prefLabel	Performance Testing of a MOSFET Sensor Performance Testing of a MOSFET Sensor (en)
skos:notation	RIV/00216305:26220/10:PU90249!RIV11-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Boušek, Jaroslav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	278503
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU90249
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Safety Sensor performance testing, Hydrogen detection, MOSFET Hydrogen sensor (en)
http://linked.open.../riv/klicoveSlovo	Safety Sensor performance testing Hydrogen detection MOSFET Hydrogen sensor
http://linked.open...ontrolniKodProRIV	[FA8EBEB2996E]
http://linked.open...v/mistoKonaniAkce	Essen
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Boušek, Jaroslav
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-05-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	7 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Neuveden
https://schema.org/isbn	978-3-89336-655-2
http://localhost/t...ganizacniJednotka	26220

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