About: Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capture time constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha (en)
Title	Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components (en)
skos:prefLabel	Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components (en)
skos:notation	RIV/00216305:26220/10:PU88547!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Pavelka, Jan Sedláková, Vlasta Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	253912
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU88547
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	MOSFET, charge transport, RTS noise, time capture (en)
http://linked.open.../riv/klicoveSlovo	MOSFET charge transport RTS noise time capture
http://linked.open...ontrolniKodProRIV	[732D87D9284D]
http://linked.open...v/mistoKonaniAkce	West Lafayette, IN
http://linked.open...i/riv/mistoVydani	Clearance Center 222 Rosewood Drive Danvers MA 0
http://linked.open...i/riv/nazevZdroje	2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Volume 1
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Pavelka, Jan Sedláková, Vlasta Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-10-17 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
issn	0084-9162
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE
http://localhost/t...ganizacniJednotka	26220

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