About: Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the leakage current in The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the leakage current in (en)
Title	Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics (en)
skos:prefLabel	Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics (en)
skos:notation	RIV/00216305:26220/10:PU88344!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Šikula, Josef Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	256761
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU88344
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Transport, Electron, Low temperature, Tantalum, Capacitors, Nanolayers (en)
http://linked.open.../riv/klicoveSlovo	Electron Low temperature Transport Capacitors Tantalum Nanolayers
http://linked.open...ontrolniKodProRIV	[B5AE0DBF8B7F]
http://linked.open...v/mistoKonaniAkce	Berlin
http://linked.open...i/riv/mistoVydani	Berlin
http://linked.open...i/riv/nazevZdroje	Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Sedláková, Vlasta Šikula, Josef Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-09-13 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE Explore Digital Library
https://schema.org/isbn	978-1-4244-8555-0
http://localhost/t...ganizacniJednotka	26220

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