About: Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis. The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis. (en)
Title	Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors (en)
skos:prefLabel	Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors (en)
skos:notation	RIV/00216305:26220/10:PU86946!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	256759
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU86946
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Tantalum Capacitor, Thin Film, Leakage current, Ta205 (en)
http://linked.open.../riv/klicoveSlovo	Leakage current Ta205 Tantalum Capacitor Thin Film
http://linked.open...ontrolniKodProRIV	[736774D14B77]
http://linked.open...v/mistoKonaniAkce	Warsaw
http://linked.open...i/riv/mistoVydani	Koszykowa 75 00 662 Warsaw Poland
http://linked.open...i/riv/nazevZdroje	Polymer Electronics and Nanotechnologies: towards System Integration
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Sedláková, Vlasta Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2010-05-12 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	3 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Piotr Firek, Ryszard Kisiel
https://schema.org/isbn	978-83-7207-874-2
http://localhost/t...ganizacniJednotka	26220

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