About: Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs

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About: Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature. We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature. (en)
Title	Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs (en)
skos:prefLabel	Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs (en)
skos:notation	RIV/00216305:26220/10:PU86944!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Pavelka, Jan Šikula, Josef Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	256749
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU86944
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Electron Density, RTS Noise, 1/f noise, Cryogenic Measurement, MOSFET (en)
http://linked.open.../riv/klicoveSlovo	Cryogenic Measurement Electron Density RTS Noise 1/f noise MOSFET
http://linked.open...ontrolniKodProRIV	[29F624B8B640]
http://linked.open...v/mistoKonaniAkce	Kyoto
http://linked.open...i/riv/mistoVydani	Koszykowa 75 00 662 Warsaw Poland
http://linked.open...i/riv/nazevZdroje	Polymer Electronics and Nanotechnologies: towards System Integration
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Pavelka, Jan Šikula, Josef Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-08-01 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Piotr Firek, Ryszard Kisiel
https://schema.org/isbn	978-83-7207-874-2
http://localhost/t...ganizacniJednotka	26220

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