About: Using MOS Gate Capacitance for Sigma-delta A/D Converter Realization

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This article deals with problems connected with gate capacitance usage for the switched capacitors sigma-delta A/D converter realization in standard CMOS semiconductor technology. Capacity of the MOS gate capacitors (MOSCAP) is strongly dependent on applied voltage. The article is focused on description of the voltage dependency physical fundamentals. There are described the basic nonlinearity compensation techniques. This article deals with problems connected with gate capacitance usage for the switched capacitors sigma-delta A/D converter realization in standard CMOS semiconductor technology. Capacity of the MOS gate capacitors (MOSCAP) is strongly dependent on applied voltage. The article is focused on description of the voltage dependency physical fundamentals. There are described the basic nonlinearity compensation techniques. (en)
Title	Using MOS Gate Capacitance for Sigma-delta A/D Converter Realization Using MOS Gate Capacitance for Sigma-delta A/D Converter Realization (en)
skos:prefLabel	Using MOS Gate Capacitance for Sigma-delta A/D Converter Realization Using MOS Gate Capacitance for Sigma-delta A/D Converter Realization (en)
skos:notation	RIV/00216305:26220/09:PU85251!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Šteffan, Pavel Macháň, Ladislav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	347995
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/09:PU85251
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	MOS, C-V characteristic, gate capacity, A/D converter, sigma-delta (en)
http://linked.open.../riv/klicoveSlovo	A/D converter sigma-delta C-V characteristic gate capacity MOS
http://linked.open...ontrolniKodProRIV	[92A470CC1075]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Electronic Devices and Systems IMAPS CS International Conference 2009, Proceedings
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Šteffan, Pavel Macháň, Ladislav
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2009-09-02 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Neuveden
https://schema.org/isbn	978-80-214-3933-7
http://localhost/t...ganizacniJednotka	26220

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