About: Amplitude of RTS Noise in MOSFETs

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths. Relative amplitude of RTS noise given by number of carriers under the gate and its dependence on channel and gate bias was analyzed. Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths. Relative amplitude of RTS noise given by number of carriers under the gate and its dependence on channel and gate bias was analyzed. (en)
Title	Amplitude of RTS Noise in MOSFETs Amplitude of RTS Noise in MOSFETs (en)
skos:prefLabel	Amplitude of RTS Noise in MOSFETs Amplitude of RTS Noise in MOSFETs (en)
skos:notation	RIV/00216305:26220/09:PU82156!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/08/0260), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Pavelka, Jan Šikula, Josef
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	302662
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/09:PU82156
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	RTS noise, MOSFET, traps (en)
http://linked.open.../riv/klicoveSlovo	MOSFET traps RTS noise
http://linked.open...ontrolniKodProRIV	[16C596784F3A]
http://linked.open...v/mistoKonaniAkce	Marrakéš
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	Proc. IEEE 21st Int. Conf. on Microelectronics ICM 2009
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Low-frequency noise in submicron MOSFET and HEMT structures
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Pavelka, Jan Tacano, Munecazu Toita, Masato Šikula, Josef
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2009-12-19 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE
https://schema.org/isbn	978-1-4244-5815-8
http://localhost/t...ganizacniJednotka	26220

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