About: Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This work deals with alternative method for mono-crystalline surface cleaning and activation by means of low pressure plasma-hydrogen etching. The gas mixture of Ar/H2 is used for etch process. Hydrogen plasma etching can removes native oxide layer very efficiently and also it facilitates high-quality passivation effect due to the silicon surface hydrogenation. A reactive SiNx:H sputtering process follows after the plasma-hydrogen etching process using the Ar/N2/H2 gas mixture. Both etching and sputtering are performed in one vacuum cycle. The aim of such processing is in elimination of SiOX interlayer formation that could be created on the substrate can lead to formation of very thin SiOxNy layer on the silicon/layer interface after start of SiNx deposition. The Fourier infrared spectroscopy (FTIR) was used for binding ratio analysis within SiNx:H layers. The influence of plasma-hydrogen etching on the minority carrier lifetime was measured by MW-PCD method. This work deals with alternative method for mono-crystalline surface cleaning and activation by means of low pressure plasma-hydrogen etching. The gas mixture of Ar/H2 is used for etch process. Hydrogen plasma etching can removes native oxide layer very efficiently and also it facilitates high-quality passivation effect due to the silicon surface hydrogenation. A reactive SiNx:H sputtering process follows after the plasma-hydrogen etching process using the Ar/N2/H2 gas mixture. Both etching and sputtering are performed in one vacuum cycle. The aim of such processing is in elimination of SiOX interlayer formation that could be created on the substrate can lead to formation of very thin SiOxNy layer on the silicon/layer interface after start of SiNx deposition. The Fourier infrared spectroscopy (FTIR) was used for binding ratio analysis within SiNx:H layers. The influence of plasma-hydrogen etching on the minority carrier lifetime was measured by MW-PCD method. (en)
Title	Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation (en)
skos:prefLabel	Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation Deposition of Sputtered SiNx:H Passivation Layers Using Hydrogen Plasma Etching for Silicon Surface Preparation (en)
skos:notation	RIV/00216305:26220/09:PU82087!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Boušek, Jaroslav Bařinka, Radim Fořt, Tomáš Hégr, Ondřej
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	309506
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/09:PU82087
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	hydrogenation, silicon surface, silicon nitride, passivation layer, magnetron sputtering (en)
http://linked.open.../riv/klicoveSlovo	silicon surface magnetron sputtering silicon nitride hydrogenation passivation layer
http://linked.open...ontrolniKodProRIV	[494CAED5895E]
http://linked.open...v/mistoKonaniAkce	Hamburg
http://linked.open...i/riv/mistoVydani	Hamburg, Germany
http://linked.open...i/riv/nazevZdroje	24th European Photovoltaic Solar Energy Conference and Exhibition
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Bařinka, Radim Fořt, Tomáš Poruba, Aleš Sobota, Jaroslav Boušek, Jaroslav Hégr, Ondřej
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2009-09-20 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	WIP-Renewable Energies
https://schema.org/isbn	3-936338-25-6
http://localhost/t...ganizacniJednotka	26220

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