About: IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. (en) Experiments were carried out for n-channel CMOS technology. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode. (cs)
Title	IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS (en) IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS (cs)
skos:prefLabel	IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS (en) IMPROVED MODEL FOR MOSFET VA CHARACTERISTICS (cs)
skos:notation	RIV/00216305:26220/09:PU81999!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Šikula, Josef Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	318817
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/09:PU81999
http://linked.open...riv/jazykVysledku	cze - čeština
http://linked.open.../riv/klicovaSlova	VA characteristic, MOSFET, electron density, diffusion current, drift current (en)
http://linked.open.../riv/klicoveSlovo	electron density MOSFET diffusion current drift current VA characteristic
http://linked.open...ontrolniKodProRIV	[29497F745A7E]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Nám. Republiky 15 Brno
http://linked.open...i/riv/nazevZdroje	Electronic Devices and Systems EDS'09 IMAPS CS International Conference 2009
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Sedláková, Vlasta Šikula, Josef Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2009-09-02 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	NOVPRESS s.r.o.
https://schema.org/isbn	978-80-214-3933-7
http://localhost/t...ganizacniJednotka	26220

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