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  • This paper reports an electrical measurement of the single junction solar cells based on silicon technology. Defects of these samples are often local and can result in lower efficiency or shorter solar cell lifetime. Consequently, we can observe many of defects in electric characteristics of solar cells. Measured IV-characteristics and noise signals provide information for defects classification and/or identification. The results of two basic types of the silicon solar cells measurements at very low temperatures are presented in this paper. Used types of solar cells differ above all in the surface texturing and dopand concentration. The cryogenic system is used to accurate setting of temperature with wide range of operating temperatures. The microscopic study of the samples surface is presented, too.
  • This paper reports an electrical measurement of the single junction solar cells based on silicon technology. Defects of these samples are often local and can result in lower efficiency or shorter solar cell lifetime. Consequently, we can observe many of defects in electric characteristics of solar cells. Measured IV-characteristics and noise signals provide information for defects classification and/or identification. The results of two basic types of the silicon solar cells measurements at very low temperatures are presented in this paper. Used types of solar cells differ above all in the surface texturing and dopand concentration. The cryogenic system is used to accurate setting of temperature with wide range of operating temperatures. The microscopic study of the samples surface is presented, too. (en)
Title
  • Extended electrical and thermal properties of single junction silicon solar cells
  • Extended electrical and thermal properties of single junction silicon solar cells (en)
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  • Extended electrical and thermal properties of single junction silicon solar cells
  • Extended electrical and thermal properties of single junction silicon solar cells (en)
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  • RIV/00216305:26220/09:PU80768!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita
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  • P(GD102/09/H074), Z(MSM0021630503)
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  • 314442
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  • RIV/00216305:26220/09:PU80768
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  • Solar cell, noise, breakdown, PN junction, transport mechanisms (en)
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  • [912E6DC6DDAD]
http://linked.open...v/mistoKonaniAkce
  • FEKT VUT v Brně
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  • Brno
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  • Proceedings of the 15th conference Student EEICT 2009
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  • Macků, Robert
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number of pages
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  • Vysoké učení technické v Brně
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  • 978-80-214-3869-9
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  • 26220
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