About: EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS

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About: EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Traps appearing both in the AlGaN/GaN and AlGaAs/GaAs heterostructures are assigned by the low frequency noise measurements. Current collapse has been monitored throughout the unpassivated and SiN-passivation processes of the AlGaN/GaN heterostructures: the noise level of E1 (47 meV) trap decreased by 10 dBA/?Hz by the SiN passivation process together with the current collapse in IV curves, while E2 (131 meV) and E3 (235 meV) levels became apparent after SiN passivation. The commercially available AlGaAs/GaAs LED heads for the page and FAX printers are found to have several deep levels introduced during the contact formation processes. Traps appearing both in the AlGaN/GaN and AlGaAs/GaAs heterostructures are assigned by the low frequency noise measurements. Current collapse has been monitored throughout the unpassivated and SiN-passivation processes of the AlGaN/GaN heterostructures: the noise level of E1 (47 meV) trap decreased by 10 dBA/?Hz by the SiN passivation process together with the current collapse in IV curves, while E2 (131 meV) and E3 (235 meV) levels became apparent after SiN passivation. The commercially available AlGaAs/GaAs LED heads for the page and FAX printers are found to have several deep levels introduced during the contact formation processes. (en)
Title	EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS (en)
skos:prefLabel	EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS EVALUATION OF AlGaN/GaN AND AlGaAs/GaAs HETERO-STRUCTURE DEEP LEVELS BY LOW FREQUENCY NOISE MEASUREMENTS (en)
skos:notation	RIV/00216305:26220/08:PU78578!RIV11-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Šikula, Josef
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	366755
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/08:PU78578
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN, HEMT, 1/f noise (en)
http://linked.open.../riv/klicoveSlovo	1/f noise GaN HEMT
http://linked.open...ontrolniKodProRIV	[9C8FEC9DED64]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	EDS 08
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Tacano, Munecazu Šikula, Josef Tanuma, Nobuhisa Matsui, Toshiaki Okumura, Hajime Yagi, Shuichi
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2008-09-10 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Neuveden
https://schema.org/isbn	978-80-214-3717-3
http://localhost/t...ganizacniJednotka	26220

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