About: Relaxation Time in CdTe Single Crystals

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Description	Bulk resistance decay of two cadmium telluride single crystals was investigated. Each CdTe crystal has four golden contacts, two current contacts and two voltage contacts. That allows us to distinguish between bulk resistance and contact area. The bulk resistance of each CdTe single crystal was measured during long time interval with an applied voltage U = 16 V. Detectors were placed into a cryostat. That allowed to hold the temperature constant during the measurements and eliminate the illumination influence. The temperature of the samples was 300 K at first and after some period of time (approximately 1 day) it was sharply raised to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the co Bulk resistance decay of two cadmium telluride single crystals was investigated. Each CdTe crystal has four golden contacts, two current contacts and two voltage contacts. That allows us to distinguish between bulk resistance and contact area. The bulk resistance of each CdTe single crystal was measured during long time interval with an applied voltage U = 16 V. Detectors were placed into a cryostat. That allowed to hold the temperature constant during the measurements and eliminate the illumination influence. The temperature of the samples was 300 K at first and after some period of time (approximately 1 day) it was sharply raised to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the co (en)
Title	Relaxation Time in CdTe Single Crystals Relaxation Time in CdTe Single Crystals (en)
skos:prefLabel	Relaxation Time in CdTe Single Crystals Relaxation Time in CdTe Single Crystals (en)
skos:notation	RIV/00216305:26220/08:PU74427!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/07/0113), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Grmela, Lubomír Holcman, Vladimír Šikula, Josef Andreev, Alexey
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	392216
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/08:PU74427
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	relaxation time constant, hole mobility, CdTe single crystal (en)
http://linked.open.../riv/klicoveSlovo	CdTe single crystal hole mobility relaxation time constant
http://linked.open...ontrolniKodProRIV	[8298C2EAD2FF]
http://linked.open...v/mistoKonaniAkce	Budapest
http://linked.open...i/riv/mistoVydani	Budapest, Hungary
http://linked.open...i/riv/nazevZdroje	ISSE 2008 Reliability and Life-time Prediction
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Holcman, Vladimír Šikula, Josef Andreev, Alexey
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2008-05-07 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Zsolt Illyefalvi-Vitez
https://schema.org/isbn	978-963-06-4915-5
http://localhost/t...ganizacniJednotka	26220

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