About: RTS Noise in Si MOSFETs and GaN/AlGaN HFETs

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanisms give rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn't obvious. Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanisms give rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn't obvious. (en)
Title	RTS Noise in Si MOSFETs and GaN/AlGaN HFETs RTS Noise in Si MOSFETs and GaN/AlGaN HFETs (en)
skos:prefLabel	RTS Noise in Si MOSFETs and GaN/AlGaN HFETs RTS Noise in Si MOSFETs and GaN/AlGaN HFETs (en)
skos:notation	RIV/00216305:26220/08:PU73784!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/05/2095), Z(MSM0021630503)
http://linked.open...iv/cisloPeriodika	9
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Pavelka, Jan Šikula, Josef
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	393529
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/08:PU73784
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN, GaN/AlGaN, HFET, MOSFET, 1/f noise, RTS noise (en)
http://linked.open.../riv/klicoveSlovo	1/f noise MOSFET GaN HFET RTS noise GaN/AlGaN
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[C425B30A693E]
http://linked.open...i/riv/nazevZdroje	WSEAS Transactions on Electronics
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Noise sources in semiconductor materials and devices
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	4
http://linked.open...iv/tvurceVysledku	Pavelka, Jan Tacano, Munecazu Šikula, Josef
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
issn	1109-9445
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	26220

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