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Description
| - Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5.
- Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5. (en)
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Title
| - Noise Spectroscopy of GaN/AlGaN HFETs
- Noise Spectroscopy of GaN/AlGaN HFETs (en)
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skos:prefLabel
| - Noise Spectroscopy of GaN/AlGaN HFETs
- Noise Spectroscopy of GaN/AlGaN HFETs (en)
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skos:notation
| - RIV/00216305:26220/08:PU73782!RIV10-MSM-26220___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/05/2095), Z(MSM0021630503)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/08:PU73782
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN, GaN/AlGaN, HFET, HEMT, 1/f noise, g-r noise, Hooge parameter (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - WSEAS Transactions on Electronics
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Pavelka, Jan
- Tacano, Munecazu
- Šikula, Josef
- Tanuma, Nobuhisa
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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