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  • ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD but also a number of secondary parasitic effects which limit the circuit performance. These effects, for example, limit the bandwidth of processed signals, causes bigger noise or lower gain. Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology.
  • ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD but also a number of secondary parasitic effects which limit the circuit performance. These effects, for example, limit the bandwidth of processed signals, causes bigger noise or lower gain. Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology. (en)
  • Výsledky simulací tyristorových snap-back charakteristik pro ochranné struktury v high voltage CMOS technologii (cs)
Title
  • New application of SCR based ESD protective structure for VHVIC technology
  • Použití tyristorových struktur v ochranných ESD obvodech pro VHVIC CMOS technologie (cs)
  • New application of SCR based ESD protective structure for VHVIC technology (en)
skos:prefLabel
  • New application of SCR based ESD protective structure for VHVIC technology
  • Použití tyristorových struktur v ochranných ESD obvodech pro VHVIC CMOS technologie (cs)
  • New application of SCR based ESD protective structure for VHVIC technology (en)
skos:notation
  • RIV/00216305:26220/07:PU70461!RIV08-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 26-105
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  • P(GD102/03/H105)
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  • 437068
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  • RIV/00216305:26220/07:PU70461
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  • ESD, LVTSCR, SCR (en)
http://linked.open.../riv/klicoveSlovo
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  • [6F5FF0CE21EF]
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  • Brno
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  • Brno, Ondráčkova 105
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  • Moderní metody řešení, návrhu a aplikace elektronických obvodů
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http://linked.open...vavai/riv/projekt
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http://linked.open...iv/tvurceVysledku
  • Běťák, Petr
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • Ing. Zdeněk Novotný CSc.
https://schema.org/isbn
  • 978-80-214-3535-3
http://localhost/t...ganizacniJednotka
  • 26220
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