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Description
| - Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction.
- Thin film electroluminescent devices made from ZnS:Mn can be designed to exhibit an inherent hysteresis in the luminance vs. applied voltage characteristics. This memory behavior offers attractive advantages for efficient operation of displays with very large information content. Additionally, such memory devices can also be switched by light or electron beams, making possible such applications as image storage and a CRT with an active faceplate. If the device is driven near the threshold voltage, a pronounced hysteresis effect in the brightness vs. pulse width response curve also occurs. The dependence of brightness characteristics, as well as the threshold voltage and response time on the film thickness of the ZnS:Mn layer is reported. The experimental results are in good agreement with the theoretical prediction. (en)
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Title
| - The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness
- The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness (en)
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skos:prefLabel
| - The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness
- The dependence of brightness and threshold voltage of memory ZnS:Mn thin film electroluminescent device upon its thickness (en)
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skos:notation
| - RIV/00216305:26220/06:PU57534!RIV10-MSM-26220___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
| - Ahmed, Mustafa M. Abdalla
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/06:PU57534
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - electroluminescence, ZnS:Mn thin film, brightess, threshold voltage, hysteresis, response time (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Proceedings of the 12th Conference STUDENT EEICT 2006
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Ahmed, Mustafa M. Abdalla
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - Vysoké učení technické v Brně. (Fakulta elektrotechniky a komunikačních technologií; Fakulta informačních technologií)
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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