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  • Pro zlepšení povrchových vlastností křemíku v polovodičových a fotovoltaických aplikacích je důležitá povrchová pasivace. Jejím přínosem je redukce rekombinačních center, vzniklých v předchozích technologických operacích. Díky pasivaci klesá povrchová rekombinace a roste doba života minoritních nosičů náboje. Pro depozici pasivačních vrstev je možné použití více metod. K nejznámějším patří PECVD (Plasma-Enhanced Chemical Vapor Deposition) a LPCVD (Low-Pressure Chemical Vapor Deposition). V tomto článku je popisována depozice pasivačních vrstev pomocí reaktivního magnetronového naprašování. (cs)
  • In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Depositioon). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.
  • In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Depositioon). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering. (en)
Title
  • SiNx and SiO2 as passivation layers for high grade solar cells.
  • SiNx and SiO2 as passivation layers for high grade solar cells. (en)
  • Vrstvy SiNx a SiO2 jako pasivace pro solární články. (cs)
skos:prefLabel
  • SiNx and SiO2 as passivation layers for high grade solar cells.
  • SiNx and SiO2 as passivation layers for high grade solar cells. (en)
  • Vrstvy SiNx a SiO2 jako pasivace pro solární články. (cs)
skos:notation
  • RIV/00216305:26220/05:PU54040!RIV06-MSM-26220___
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  • surface passivation, solar cell, deposition of SiN and SiO2, recombination (en)
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  • [0783C8C3F80D]
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  • Boušek, Jaroslav
  • Hégr, Ondřej
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  • nakl. Z. Novotný
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  • 26220
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