About: Noise and Carge Storage in Nb2O5 Thin Films

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode ((for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling. A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode ((for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling. (en) A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode ((for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling. (cs)
Title	Noise and Carge Storage in Nb2O5 Thin Films Noise and Carge Storage in Nb2O5 Thin Films (en) Noise and Carge Storage in Nb2O5 Thin Films (cs)
skos:prefLabel	Noise and Carge Storage in Nb2O5 Thin Films Noise and Carge Storage in Nb2O5 Thin Films (en) Noise and Carge Storage in Nb2O5 Thin Films (cs)
skos:notation	RIV/00216305:26220/05:PU52183!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany	135-138
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Grmela, Lubomír Sedláková, Vlasta Šikula, Josef
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	532936
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/05:PU52183
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Noise, Poole-Frenkel transport, Tunnelling, Niobium Pentoxide, MIS structure (en)
http://linked.open.../riv/klicoveSlovo	Noise Tunnelling MIS structure Niobium Pentoxide Poole-Frenkel transport
http://linked.open...ontrolniKodProRIV	[2633D6050814]
http://linked.open...v/mistoKonaniAkce	Salamanca, Spain
http://linked.open...i/riv/mistoVydani	United States of America
http://linked.open...i/riv/nazevZdroje	Noise and Fluctuations
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Höschl, Pavel Sedláková, Vlasta Tacano, Munecazu Šikula, Josef Sita, Z. Hashiguchi, Sumihisa
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2005-09-19 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	American Institute of Physics
https://schema.org/isbn	0-7354-0267-1
http://localhost/t...ganizacniJednotka	26220

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